Silicon MBE apparatus for uniform high-rate deposition on standard format wafers

Journal Article · Mon Feb 01 04:00:00 EST 1982 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.571347· OSTI ID:5848761

Bean, J; Sadowski, E

The design and operation of a second generation silicon MBE apparatus are described. A large sample loading interlock permits rapid introduction of standard format 3--4-in.-diam silicon and sapphire substrates. Silicon and metallic species are deposited from dual e-beam evaporation sources at rates of up to 1/3 ..mu..m/min. Dopants are introduced by evaporation from conventional Knudsen cells or by simultaneous, low energy ion implantation. Silicon, metal and ionized dopant fluxes are directly sensed and regulated to within approx.1% of preprogrammed values. Rotation of the substrate yields deposition uniformity of < or =1% across a 3-in. wafer. The system includes instrumentation for low and high energy electron diffraction, Auger electron spectroscopy and residual gas analysis.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5848761
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 20:2; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular &amp; Chemical Physics-- Beams &amp; their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ATOM COLLISIONS
AUGER ELECTRON SPECTROSCOPY
BEAM PRODUCTION
BEAMS
CHALCOGENIDES
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
COBALT
COHERENT SCATTERING
COLLISIONS
CORUNDUM
DEPOSITION
DESIGN
DIFFRACTION
DIMENSIONS
DOPED MATERIALS
ELECTRON BEAMS
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
EVAPORATION
FABRICATION
ION BEAMS
ION COLLISIONS
ION IMPLANTATION
LAYERS
LEPTON BEAMS
MATERIALS
METALS
MINERALS
MOLECULAR BEAMS
OPERATION
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHASE TRANSFORMATIONS
QUANTITATIVE CHEMICAL ANALYSIS
SAPPHIRE
SCATTERING
SEMIMETALS
SILICON
SPECTROSCOPY
SUBSTRATES
SURFACE COATING
THICKNESS
TRANSITION ELEMENTS
VAPOR DEPOSITED COATINGS