Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition

Journal Article · · Journal of Materials Research
DOI:https://doi.org/10.1557/JMR.2000.0144· OSTI ID:20216861
 [1];  [1];  [1];  [1]
  1. Center for Solid State Science, Science and Engineering of Materials, Arizona State University, Tempe, Arizona 85287-1704 (United States)
An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 degree sign C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented. (c) 2000 Materials Research Society.
OSTI ID:
20216861
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 15; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English