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Critical magnetic field of very thin superconducting aluminum films

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
We have measured the parallel critical magnetic field H/sub c/parallel of 4-nm-thick Al films. The conductance dI/dV of tunnel junctions made on these film was used to obtain for each film the orbital depairing parameter zeta and spin-orbit scattering parameter b which were then used in the theory of high-field superconductivity to calculate H/sub c/parallel. Comparison of the calculated and measured values shows the theory in its traditional form to be quantitatively lacking. When renormalization effects due to the electron-phonon interaction are included, the theory with no adjustable parameters gives a good description of H/sub c/parallel for the Al films. However, if the Al is coated with submonolayer thickness of heavy metal to increase b, the theory does not reproduce the measured H/sub c/parallel as well.
Research Organization:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
OSTI ID:
5848031
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 25:1; ISSN PRBMD
Country of Publication:
United States
Language:
English