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Tunneling measurements of ultrathin superconducting Ga films in high magnetic fields

Journal Article · · Phys. Rev., B; (United States)

Tunneling measurements in magnetic fields up to 15 T were made on Ga films about 100 A thick deposited at T approx. = 1 K. The values of the spin-orbit scattering parameter b equivalent h/3tau/sub so/..delta.. and the orbital depairing parameter zeta were determined for as-deposited amorphous films and for polycrystalline films obtained by annealing at T approx. = 77 K. The tunneling conductance agreed closely with predictions of the theory of Maki and Fulde. For the best Ga-film tunnel junction a value of b = 0.2 +- 0.02 was obtained and this value did not change significantly during annealing, even though the resistively determined transport scattering time increased by a factor of 7.8 during annealing. Orbital depairing was found to follow a relation zeta = zeta/sub 0/ + ..cap alpha..H/sup 2/ and to increase with annealing in a manner expected from the change in mean free path determined from measurements of H/sub cnu/.

Research Organization:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
OSTI ID:
5005230
Journal Information:
Phys. Rev., B; (United States), Journal Name: Phys. Rev., B; (United States) Vol. 17:7; ISSN PLRBA
Country of Publication:
United States
Language:
English