Electronic structure of the (001) InAs-GaSb superlattice

Journal Article · Thu Nov 15 04:00:00 EST 1979 · Phys. Rev., B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.20.4120· OSTI ID:5847852

Ihm, J; Lam, P K; Cohen, M L

The self-consistent pseudopotential method has been applied to describe the electronic structure of the abrupt (001) InAs-GaSb superlattice. According to the electron affinity rule, the bottom of the conduction band of InAs lies below the top of the valence band of GaSb. Consequently, physically interesting phenomena have been expected for this system. Since the possible charge redistribution at the junction determines the dipole potential and the relative lineup of the band edges, self-consistency in charge distribution is required of a quantitative theory of a superlattice. The calculated band-edge lineup, band dispersions, and the electronic configuration at the junction are presented and discussed.

• Research Organization: Department of Physics, University of California, Berkeley, California 94720
• OSTI ID: 5847852
• Journal Information: Phys. Rev., B: Condens. Matter; (United States), Journal Name: Phys. Rev., B: Condens. Matter; (United States) Vol. 20:10; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
ELECTRONIC STRUCTURE
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
PNICTIDES
SEMICONDUCTOR MATERIALS
SUPERLATTICES