Electronic structure of InAs/GaSb (001) superlattices - two-dimensional effects

Technical Report · Mon Jan 01 00:00:00 EST 1979

OSTI ID:5475063

Madhukar, A; Nucho, R N

Detailed calculations of the two-dimensional effects in the electronic structure of Indium Arsenic Gallium Antimony (001) superlattices are presented for the first time. Comparison of the calculated thickness dependence of the superlattice band gap with optical-absorption measurements shows that, at the Gamma-point, the conduction band edge of InAs lies about 60 meV below the valence band edge of GaSb. Eigenfunctions of the highest light and heavy hole bands, and the lowest two conduction bands exhibit spatially confined nature in the GaSb and InAs regions, respectively, thus establishing the two-dimensional nature of these bands. The calculated conduction band effective mass in the plane of the superlattice near the gamma-point is found to be enhanced by a factor of 2.5 over the bulk InAs value and compares very well with the appropriate mass extracted from recent magnetoresistance measurements.

• Research Organization: University of Southern California, Los Angeles (USA). Dept. of Physics
• OSTI ID: 5475063
• Report Number(s): AD-A-187346/2/XAB
• Resource Relation: Other Information: Pub. in Solid State Communications, Vol. 32, No. 4, 331-336(1979)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ANTIMONIDES
SUPERLATTICES
INDIUM ARSENIDES
ELECTRONIC STRUCTURE
ABSORPTION
CRYSTAL LATTICES
EIGENVECTORS
MAGNETORESISTANCE
OPTICAL PROPERTIES
THICKNESS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties