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Electrical properties of single crystal antimony selenide

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5847779
The d.c. and a.c. electrical conductivity in stoichiometric and selenium-doped single crystal antimony selenide along, as well as perpendicular to, the cleavage planes, in addition to the thermo-emf coefficient, was measured from 300-500/sup 0/K. Possible conductivity mechanisms, including hopping, were considered. It was argued that electron hopping between defects is associated with dangling bonds, especially along the Sb-Se-Sb chains.
Research Organization:
A. S. Popov Electrotechnical Institute, Odessa, USSR
OSTI ID:
5847779
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:4; ISSN INOMA
Country of Publication:
United States
Language:
English