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Neutron irradiation effects on PZT thin films for nonvolatile memory applications

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5845158
; ; ;  [1]
  1. Harry Diamond Labs., Adelphi, MD (United States)

This paper examines the effects of neutron irradiation on ferroelectric (FE) lead-zirconate-titanate (PZT) thin films. The data show only a slight loss in the FE switched charge, as measured by the hysteresis loop, up to 1 {times} 10{sup 15} n/cm{sup 2}. The retained polarization, as measured by a pulse technique, showed a larger loss of remnant polarization which saturated at the lowest fluence measured (1 {times} 10{sup 13} n/cm{sup 2}). However, in neither case does it appear that the film was degraded sufficiently to cause devices made from sol-gel PZT to fail at fluences at or below 1 {times} 10{sup 15} n/cm{sup 2}. The endurance characteristics of the film were unchanged due to neutron irradiation.

OSTI ID:
5845158
Report Number(s):
CONF-910751--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English