Semiconductor laser device

Patent · Tue Sep 08 04:00:00 EDT 1981

OSTI ID:5844562

Hirao, M; Kajimura, T; Kuroda, T; Nakamura, M; Umeda, J; Yamashita, S

In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double heterostructure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of gainasp crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.

• Assignee: Hitachi Ltd (Japan)
• Patent Number(s): US 4288757
• OSTI ID: 5844562
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360000 -- Materials
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC
CLADDING
CRYSTALS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
FABRICATION
GALLIUM
GRADED BAND GAPS
INDIUM
LASERS
LAYERS
METALS
NONMETALS
OPTICAL PROPERTIES
OSCILLATIONS
PHOSPHORUS
PHYSICAL PROPERTIES
RADIATIONS
RADIOWAVE RADIATION
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SHORT WAVE RADIATION
SURFACE COATING