InGaAsP/InP high-power semi-insulating blocked planar buried-heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy

Journal Article · Mon Dec 28 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98903· OSTI ID:5843810

Miller, B I; Koren, U; Capik, R J; Su, Y K

High-power semi-insulating blocked planar buried-heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for the trimethylgallium and AsH/sub 3/. Current thresholds as low as 20 mA and differential quantum efficiencies greater than or equal to20% per facet at 1.3 and 1.5 ..mu..m were obtained with power outputs of about 25 mW/facet. These results are similar to SIPBH lasers where liquid phase epitaxy was used to grow the active layer, but because of the better planarity and uniformity of OMVPE-grown material, it appears possible to grow material that can give a high yield of distributed feedback lasers.

• Research Organization: AT and T Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5843810
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:26; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
ARSENIDES
COATINGS
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYDRIDES
HYDROGEN COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY