Integrated devices including cleaved semiconductor lasers
Patent
·
OSTI ID:5843796
A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.
- Assignee:
- American Telephone and Telegraph Co., AT and T Bell Laboratories, Murray Hill, NJ
- Patent Number(s):
- US 4707219
- OSTI ID:
- 5843796
- Resource Relation:
- Patent File Date: Filed date 14 May 1985
- Country of Publication:
- United States
- Language:
- English
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