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Characterization of Y[sub 2]O[sub 3]-stabilized ZrO[sub 2] thin films by plasma-enhanced metallogenic chemical vapor deposition

Journal Article · · Journal of the Electrochemical Society; (United States)
OSTI ID:5841232
;  [1]; ;  [2]
  1. Chungman National Univ., Taejon (Korea, Republic of). Dept. of Materials Engineering
  2. Electronics and Telecommunications Research Inst., Taejon (Korea, Republic of)

Yttria-stabilized zirconia (YSZ) films were deposited on (100) silicon wafers by a plasma-enhanced metallogenic chemical vapor deposition (PEMOCVD) process involving the application of vapor mixtures of bisdipivaloylmethanato yttrium, zirconium tetra-t-butoxide, and oxygen. From the X-ray diffraction (XRD) and transmission electron microscopy (TEM) results, the as-deposited YSZ films were found to be a single cubic phase and the preferred orientation of (100). Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) analyses were performed to determine the Y[sub 2]O[sub 3] mole percentage in YSZ films and this result was compared with that obtained by Aleksandrov model using the lattice constant by X-ray diffraction. The Y[sub 2]O[sub 3] mole percentage in YSZ films obtained by AES and RBS showed a great deviations from those predicted by the Aleksandrov model.

OSTI ID:
5841232
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:9; ISSN 0013-4651; ISSN JESOAN
Country of Publication:
United States
Language:
English