Characterization of Y[sub 2]O[sub 3]-stabilized ZrO[sub 2] thin films by plasma-enhanced metallogenic chemical vapor deposition
- Chungman National Univ., Taejon (Korea, Republic of). Dept. of Materials Engineering
- Electronics and Telecommunications Research Inst., Taejon (Korea, Republic of)
Yttria-stabilized zirconia (YSZ) films were deposited on (100) silicon wafers by a plasma-enhanced metallogenic chemical vapor deposition (PEMOCVD) process involving the application of vapor mixtures of bisdipivaloylmethanato yttrium, zirconium tetra-t-butoxide, and oxygen. From the X-ray diffraction (XRD) and transmission electron microscopy (TEM) results, the as-deposited YSZ films were found to be a single cubic phase and the preferred orientation of (100). Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) analyses were performed to determine the Y[sub 2]O[sub 3] mole percentage in YSZ films and this result was compared with that obtained by Aleksandrov model using the lattice constant by X-ray diffraction. The Y[sub 2]O[sub 3] mole percentage in YSZ films obtained by AES and RBS showed a great deviations from those predicted by the Aleksandrov model.
- OSTI ID:
- 5841232
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:9; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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360602 -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL STRUCTURE
DATA
DEPOSITION
ELEMENTS
EXPERIMENTAL DATA
INFORMATION
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
SEMIMETALS
SILICON
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
VAPOR DEPOSITED COATINGS
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES