Analysis of transients in pulse modulated semiconductor lasers biased near threshold
Journal Article
·
· Appl. Phys. Lett.; (United States)
A theory of time jitter in semiconductor lasers initially biased just below threshold is developed. Simulations of the buildup of emitted optical pulses in lasers starting from below or above threshold are also presented which, for initial biasing up to threshold, are in good agreement with the theory. In particular, we show that time jitter does not vary for biasing currents up to about 0.95 of the threshold value, while it suffers a small increase at threshold and a steep decrease for higher biasing currents.
- Research Organization:
- Fondazione Ugo Bordoni, via B. Castiglione 59, 00142 Roma, Italy (IT); Dipartmento di Fisica dell'Universita de L'Aquila, Piazza Rivera 1, 67100 L'Aquila, Italy
- OSTI ID:
- 5834489
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Near threshold operation of semiconductor lasers and resonant-type laser amplifiers
Experimental measurements and theory of first passage time in pulse-modulated semiconductor lasers
Enhanced frequency modulation in cleaved-coupled-cavity semiconductor lasers with reduced spurious intensity modulation
Journal Article
·
Tue Jun 01 00:00:00 EDT 1993
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5826451
Experimental measurements and theory of first passage time in pulse-modulated semiconductor lasers
Journal Article
·
Thu Jun 01 00:00:00 EDT 1989
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:5774293
Enhanced frequency modulation in cleaved-coupled-cavity semiconductor lasers with reduced spurious intensity modulation
Journal Article
·
Thu Sep 15 00:00:00 EDT 1983
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5748096