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Near threshold operation of semiconductor lasers and resonant-type laser amplifiers

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/3.234399· OSTI ID:5826451
; ;  [1]
  1. Politecnico di Torino, Torino (Italy). Dept. di Electtronica
The characteristics of a semiconductor laser operating in the threshold region are investigated systematically. In this transition region from below to above threshold, the line-width versus injection current characteristic is found to be nonmonotonic: a local minimum of linewidth just below threshold and a local maximum just above threshold are confirmed experimentally. If a semiconductor laser works below threshold as a resonant optical amplifier or optical filter, the small-signal frequency bandwidth is found to be equivalent to the spontaneous emission linewidth. When the laser amplifier is used simultaneously as a photodetector, the maximum value of photodetection sensitivity is achieved with the laser amplifier biased between 98-99% of the threshold current. The Fokker-Planck equation method is employed in the linewidth calculation. A numerical computer simulation is also performed using the rate-equation model. A reasonable agreement between theory and experiment is obtained.
OSTI ID:
5826451
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:6; ISSN 0018-9197; ISSN IEJQA7
Country of Publication:
United States
Language:
English