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Use of silicon bipolar transistors as sensors for neutron energy spectra determinations

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.124091· OSTI ID:5832710
; ;  [1]
  1. Sandia National Labs., Albuquerque, NM (United States)
Recent reevaluation of the neutron displacement damage function for silicon qualifies it as a sensor for spectra determinations. This development is especially useful in the critical energy region from 0.2 to 2.0 MeV where, in the absence of fission foils, there is a shortage of response functions needed to define spectra satisfactorily. This paper describes how silicon bipolar devices can be used to improve neutron spectra determinations and therefore to better predict the displacement damage induced in devices.
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5832710
Report Number(s):
CONF-910751--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
Country of Publication:
United States
Language:
English