Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5825950

Musseau, O; Leray, J L; Umbert, A; Coic, Y M ^[1]; Hesto, P ^[2]

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1. Commissariat a l'Energie Atomique, Centre d'Etudes de Bruyeres le Chatel, BP 12, 91680 Bruyeres le Chatel (FR)
2. Inst. d'Electronique Fondamentale, Bat. 220, Univ. Paris XI, 91405 Orsay Cedex (FR)

In this paper the authors investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. The authors' physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor.

• OSTI ID: 5825950
• Report Number(s): CONF-910751--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE COLLECTION
CHARGED PARTICLES
DATA
DIFFUSION
EXPERIMENTAL DATA
HEAVY IONS
INFORMATION
IONS
MONTE CARLO METHOD
MOS TRANSISTORS
NUMERICAL DATA
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SUBSTRATES
TRANSISTORS