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Hardness assurance for low-dose space applications

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.124145· OSTI ID:5825874
; ;  [1]
  1. Sandia National Labs., Albuquerque, NM (United States)

This paper presents a method to conservatively estimate MOS hardness in space that shares the same technical basis as MIL-STD 883C, Test Method 1019.4, but permits greater latitude in part selection for low-dose space systems. Cobalt-60 irradiation at 50-300 rad(Si)/s followed by 25{degrees} C anneal is shown to provide an effective test of oxide-charge related failures at low dose rates that is considerably less conservative than Method 1019.4. For MOS devices with gate oxides thinner than 100 nm, the authors show that an elevated temperature rebound test generally is not required for systems with total dose requirements less than 5 krad(Si). For thicker gate oxides and/or higher-dose system requirements, rebound testing per Method 1019.4 generally is required to ensure that devices do not fail in space due to interface-trap effects.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5825874
Report Number(s):
CONF-910751--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English