Model of deep centers formation and reactions in electron irradiated InP

Journal Article · Tue Jul 15 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337453· OSTI ID:5818804

Sibille, A; Suski, J; Gilleron, M

We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p/sup +/n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples.

• Research Organization: Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux, 196 avenue Henri Ravera, 92220 Bagneux, France
• OSTI ID: 5818804
• Journal Information: J. Appl. Phys.; (United States), Vol. 60:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON COLLISIONS
ELECTRON MOBILITY
INTERSTITIALS
MATHEMATICAL MODELS
MIGRATION
P-N JUNCTIONS
TRAPS
VACANCIES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
INDIUM COMPOUNDS
JUNCTIONS
MOBILITY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
360605* - Materials- Radiation Effects