Positron annihilation investigations of vacancies in InP produced by electron irradiation at room temperature

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365041· OSTI ID:496396

Bretagnon, T; Dannefaer, S; Kerr, D ^[1]

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1. University of Winnipeg, Winnipeg, Manitoba R3B 2E9 (Canada)

Positron lifetime investigations were done on a series of InP samples irradiated to various doses with 2.5 MeV electrons. In n-type materials, positron lifetimes of 265{plus_minus}5 and 338{plus_minus}15 ps are attributed to indium vacancy{endash}interstitial complexes and divacancy{endash}interstitial complexes, respectively. In p-type materials these defects were not observed. Thermal annealing took place up to 200{degree}C for both defect types. Introduction rates were estimated to be 0.1 cm{sup {minus}1} for V{sub In}{center_dot}In{sub I} and {approximately}0.05 cm{sup {minus}1} for the divacancies. The divacancies showed a temperature dependence of the trapping rate, which suggests a thermally activated process. No evidence for V{sub P} vacancies could be found in neither p-type nor n-type materials. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 496396
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
ELECTRON BEAMS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERSTITIALS
LIFETIME
POSITRONS
RADIATION EFFECTS
VACANCIES