HgTe-CdTe-InSb heterostructures by molecular beam epitaxy

Journal Article · Thu Aug 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96185· OSTI ID:5818223

Ballingall, J M; Leopold, D J; Peterman, D J

HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 C. X-ray diffraction measurements indicate that thin epitaxial layers are of high crystalline quality. Secondary-ion mass spectroscopy measurements show substantial In and Sb diffusion into the epitaxial layers with a concentration enhancement at the HgTe-CdTe interface. 9 references.

• Research Organization: McDonnell Douglas Research Labs., St. Louis, MO
• OSTI ID: 5818223
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELECTRON DENSITY
EPITAXY
HETEROJUNCTIONS
INDIUM COMPOUNDS
JUNCTIONS
MASS SPECTROSCOPY
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SCATTERING
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
X-RAY DIFFRACTION