Theory of the electrical and photovoltaic properties of polycrystalline silicon

Journal Article · Tue Jan 01 04:00:00 EST 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327342· OSTI ID:5817518

Ghosh, A K; Fishman, C; Feng, T

Grain boundary states play a dominant role in determining the electrical and photovoltaic properties of polycrystalline silicon by acting as traps and recombination centers. The recombination loss at grain boundaries is the predominant loss mechanism in polycrystalline solar cells. Cell parameters are calculated based on a transformation of grain boundary recombination centers to a uniform distribution of such states throughout the grain. Effective carrier lifetime is expressed in terms of grain size, allowing calculation of short-circuit current, open-circuit voltage, and fill factor. Excellent agreement is observed between theory and experiment for almost all device parameters. It is indicated that one could fabricate 10% efficiency polycrystalline solar cells from 20-..mu..m-thick material if the grain size exceeds 500 ..mu..m.

• Research Organization: Exxon Research and Engineering Co., Linden, New Jersey 07036
• OSTI ID: 5817518
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
GRAIN BOUNDARIES
LIFETIME
LOSSES
MATHEMATICAL MODELS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
POLYCRYSTALS
RECOMBINATION
SEMIMETALS
SILICON
SOLAR CELLS
TRAPS