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Grain boundary effects in polycrystalline silicon solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5460733
By solving the three-dimensional diffusion equation by Green's function method, the I-V characteristics of polycrystalline Si solar cells with vertical grain boundaries and n-p junctions have been investigated. The procedure includes the effects of grain size, thickness of the cell and the recombination velocity of the minority carriers at the grain boundary. The results of this study suggest that an efficiency as high as 15% may be achieved with samples of grain size 100 ..mu..m, thickness 100 ..mu..m, and velocity 100 m/sec when other loss mechanisms are negligibly small or absent.
Research Organization:
Dept. of Physics, Univ. of South Florida, Tampa, FL
OSTI ID:
5460733
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English