High bandgap window layer for GaAs solar cells and fabrication process therefor
The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.
- Assignee:
- Hughes Aircraft Co.
- Patent Number(s):
- US 4156310
- OSTI ID:
- 5816731
- Resource Relation:
- Patent File Date: Filed date 17 Mar 1978
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
WINDOWS
ALUMINIUM PHOSPHIDES
ANTIMONY COMPOUNDS
ENERGY GAP
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
P-N JUNCTIONS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
OPENINGS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion