Depth-profile of the excitonic luminescence in gallium-nitride layers
Book
·
OSTI ID:581136
- TU Berlin (Germany). Inst. fuer Festkoerperphysik
- Nagoya Univ. (Japan). Dept. of Electronics
- Univ. of Bristol (United Kingdom). H.H. Wills Physics Lab.
The authors present results of spatially-resolved photoluminescence and Raman measurements on a 200 {micro}m thick GaN layer grown on sapphire by hydride vapor phase epitaxy. The microphotoluminescence measurements reveal that the peak position of the excitonic and donor-acceptor-pair transitions strongly depends on the distance to the substrate interface. They observed a strong blue shift near the interface and discuss the influence of strain, which they quantified by micro-Raman experiments.
- OSTI ID:
- 581136
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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