High resolution x-ray diffraction of GaN grown on sapphire substrates

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:581083

Saxler, A ^[1]; Capano, M A; Mitchel, W C ^[2]; Kung, P; Zhang, X; Walker, D; Razeghi, M ^[1]

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1. Northwestern Univ., Evanston, IL (United States)
2. Wright Lab., Wright-Patterson AFB, OH (United States). Materials Directorate

X-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, the authors need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metalorganic chemical vapor deposition (MOCVD) on (00{sm_bullet}1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00{sm_bullet}2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

• OSTI ID: 581083
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIAGNOSTIC TECHNIQUES
EXPERIMENTAL DATA
GALLIUM NITRIDES