Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas source MBE using RHEED in-situ monitoring

Book · Wed Dec 31 00:00:00 EST 1997

OSTI ID:581067

Okumura, H; Balakrishnan, K; Feuillet, G; Ishida, Y; Yoshida, S ^[1]; Ohta, K ^[2]; Hamaguchi, H; Chichibu, S ^[3]

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1. Electrotechnical Lab., Tsukuba, Ibaraki (Japan)
2. Shibaura Inst. of Tech., Minatoku, Tokyo (Japan)
3. Science Univ. of Tokyo, Noda, Chiba (Japan)

By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19 meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

• OSTI ID: 581067
• Report Number(s): CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%158
• Resource Relation: Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
GALLIUM NITRIDES
CRYSTAL STRUCTURE
OPTICAL PROPERTIES
GALLIUM ARSENIDES
SILICON CARBIDES
CRYSTAL GROWTH
EXPERIMENTAL DATA