Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas source MBE using RHEED in-situ monitoring

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:581067

Okumura, H; Balakrishnan, K; Feuillet, G; Ishida, Y; Yoshida, S ^[1]; Ohta, K ^[2]; Hamaguchi, H; Chichibu, S ^[3]

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1. Electrotechnical Lab., Tsukuba, Ibaraki (Japan)
2. Shibaura Inst. of Tech., Minatoku, Tokyo (Japan)
3. Science Univ. of Tokyo, Noda, Chiba (Japan)

By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19 meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

• OSTI ID: 581067
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SILICON CARBIDES