Material and device characteristics of MBE grown GaN using a new rf plasma source
- Brown Univ., Providence, RI (United States)
- EPI MBE Products Group, St. Paul, MN (United States)
A new rf plasma nitrogen source has been characterized for growth of GaN on basal-plane sapphire by molecular beam epitaxy. For rf power of 500 W and N{sub 2} flow rate of 2 sccm, a maximum GaN growth rate of 0.80 {micro}m/hr is obtained,m implying a source efficiency greater than 5%. It is found that the GaN surface roughness is extremely sensitive to V:III ratio near unity and independent of growth rate in the range 0.3--0.8 {micro}m/hr. Roughness as small as 1.0 nm (rms) is measured by atomic-force microscopy. Microstructure of the high-growth-rate films is similar to other GaN films, as observed in cross-section transmission electron microscope images. The electroluminescence spectra from homojunction light-emitting diodes exhibit a band of near-ultraviolet emissions corresponding to the energy separation of the intentional donor and acceptor levels on the two sides of the junction. The intensity of these emissions relative to the visible spectrum increases with drive current density, implying saturation of deep trap levels responsible for the visible light output.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 581049
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%150
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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