III-V nitrides growth by atmospheric-pressure MOVPE with a three layered flow channel
Book
·
OSTI ID:580983
- Nippon Sanso Co., Tsukuba, Ibaraki (Japan). Tsukuba Labs.
- Nagoya Inst. of Tech., Aichi (Japan). Dept. of Electrical and Computer Engineering
The authors introduce III-V nitrides growth including GaN as well as InGaN by a newly developed atmospheric-pressure metal-organic vapor phase epitaxy system with a three layered flow channel which is a promising system for a large scale production. First, they have shown through computer simulation that a laminar flow of gases is maintained at 1,000 C in the three layered flow channel. Second, as a part of epitaxial results, they have found that the surface roughness of a low temperature-grown buffer layer on sapphire substrates, which can be measured by atomic force microscope, should be minimum in order to grow high quality GaN. They also report the growth of a double heterostructure of In{sub 0.15}Ga{sub 0.85}N/GaN which shows a strong near band-edge emission in room temperature photoluminescence.
- OSTI ID:
- 580983
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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