Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE

Journal Article · Mon Apr 23 04:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2733153· OSTI ID:21057148

Yildiz, A; Ozturk, M K; Kasap, M ^[1]

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1. Department of Physics, Gazi University, Ankara (Turkey)

We present a study on the n-type ternary InGaN layers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type of the InxGa1-xN, alloys was made for three series samples. Structural, electrical and optical properties were characterized by High X-Ray Diffraction, Hall effect and Photoluminescence respectively.

• OSTI ID: 21057148
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 899; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATMOSPHERIC PRESSURE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
GALLIUM NITRIDES
HALL EFFECT
INDIUM COMPOUNDS
LAYERS
N-TYPE CONDUCTORS
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
SUBSTRATES
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION