MOCVD growth of GaN films on lattice-matched oxide substrates
- Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering; and others
The use of the nearly lattice-matched oxide substrates LiGaO{sub 2} and LiAlO{sub 2} has been explored for growth of GaN by MOCVD. As compared to the quality of films grown on sapphire, only growth on LiGaO{sub 2} yielded good quality films, and required use of nitrogen as the carrier gas. Furthermore, high structural quality films were grown on LiGaO{sub 2} at temperatures as low as 850 C. Dislocation densities estimated from cross-sectional TEM micrographs were found to be as low as 10{sup 7} cm{sup {minus}2}. HRTEM studies revealed deformations at the surface of the LiGaO{sub 2} adjacent to deposited GaN films, indicating possible interfacial reactions which may affect the film properties. The GaN film orientations corresponded directly to the substrate orientation, viz., ({l_brace}0001{r_brace}/{l_brace}001{r_brace} and {l_brace}1{bar 1}02{r_brace}/{l_brace}101{r_brace}).
- OSTI ID:
- 580980
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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