The composition pulling effect in InGaN growth on the GaN and AlGaN epitaxial layers grown by MOVPE
Book
·
OSTI ID:580972
- Nagoya Univ. (Japan). Dept. of Electronics
InGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and the composition pulling effect at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.
- OSTI ID:
- 580972
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy
Comparative study of polar and semipolar (112⁻2) InGaN layers grown by metalorganic vapour phase epitaxy
Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:417644
Comparative study of polar and semipolar (112⁻2) InGaN layers grown by metalorganic vapour phase epitaxy
Journal Article
·
Tue Oct 21 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22305817
Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
Conference
·
Sat Jul 01 00:00:00 EDT 2000
·
OSTI ID:20104605