Titanium and nickel silicide formation after Q-switched laser and multiscanning electron beam irradiation

Journal Article · Mon Mar 01 00:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.330651· OSTI ID:5809020

Bentini, G G; Servidori, M; Cohen, C; Nipoti, R; Drigo, A V

The use of Q-switched ruby laser and multiscanning electron-beam annealing to produce the reaction of thin Ti and Ni films deposited onto silicon single crystals has been studied. Rutherford Backscattering (RBS), /sup 16/O(d, p)/sup 17/O* nuclear reaction, scanning electron microscopy (SEM) observation, and x-ray diffraction were used to characterize the reacted layers. It was found that laser annealing produces a reaction only at the metal-semiconductor interface: the reacted layers are not uniform in composition and more similar to a mixture than to a well-defined phase. On the contrary, the silicide layers produced by multiscanning e beam result from the solid-state reaction of the whole metal film and have a layered structure with well-defined phase composition and sharp interfaces both between the silicide phases and the underlying semiconductor in Ti/Si system. It was observed that the TiSi/sub 2/ growth mechanism during e irradiation cannot be explained with the parabolic ''diffusion controlled'' mechanism operating in the standard furnace annealing. All our observation seems to indicate that the growth mechanism is a ''nucleation controlled'' process, in which the growth speed of the disilicide is limited by the speed of ejection of oxygen from a TiSi/sub 2/ layer. In a Ni/Si system, only the NiSi phase could be obtained as a very uniform layer after the e-beam irradiation; the impossibility of obtaining the Ni/sub 2/Si phase indicates that, in these conditions, the ''first-phase nucleation law'' is no more valid.

• Research Organization: CNR-Istituto LAMEL, Via Castagnoli l, 40126 Bologna, Italy
• OSTI ID: 5809020
• Journal Information: J. Appl. Phys.; (United States), Vol. 53:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
NICKEL SILICIDES
ELECTRON SCANNING
IRRADIATION
SYNTHESIS
TITANIUM SILICIDES
ANNEALING
BACKSCATTERING
CHEMICAL REACTIONS
DATA
LASER RADIATION
MONOCRYSTALS
NUCLEAR REACTIONS
OXYGEN 16
OXYGEN 17
Q-SWITCHING
RUTHERFORD SCATTERING
SCANNING ELECTRON MICROSCOPY
THICKNESS
X-RAY DIFFRACTION
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
DIMENSIONS
ELASTIC SCATTERING
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
EVEN-EVEN NUCLEI
EVEN-ODD NUCLEI
HEAT TREATMENTS
INFORMATION
ISOTOPES
LIGHT NUCLEI
MICROSCOPY
NICKEL COMPOUNDS
NUCLEI
OXYGEN ISOTOPES
RADIATIONS
SCATTERING
SILICIDES
SILICON COMPOUNDS
STABLE ISOTOPES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture