High current metal ion implantation to synthesize some conducting metal-silicides

Journal Article · Thu Jun 10 04:00:00 EDT 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.59293· OSTI ID:21208063

Liu, B X; Gao, K Y ^[1]

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1. Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

High current metal-ion implantation by a metal vapor vacuum arc ion source was conducted to synthesize some conducting metal-silicides. It was found that C54-TiSi{sub 2}, ZrSi{sub 2}, NiSi{sub 2}, CoSi{sub 2}, {beta}-FeSi{sub 2}, NbSi{sub 2} and TaSi{sub 2} layers on Si wafers with good electric properties could be obtained directly after implantation. In comparison, the formation of some other silicides like {alpha}-FeSi{sub 2}, NbSi{sub 2}, TaSi{sub 2}, tetragonal-WSi{sub 2} and tetragonal-MoSi{sub 2} required an additional post-annealing to improve their crystallinity and thus their electric properties. Interestingly, the NiSi{sub 2} layers of superior electric properties were obtained at a selected Ni-ion current density of 35 {mu}A/cm{sup 2}. At this current, a beam heating raised the Si wafer to a specific temperature of 380 deg. C, at which the size difference between NiSi{sub 2} and Si lattices was nil. The resistivity of the NiSi{sub 2} layers so obtained was much lower than that of the Ni-disilicide formed by solid-state reaction at >750 deg. C. The formation mechanism of the above metal-silicides and the associated electric properties will also be discussed.

• OSTI ID: 21208063
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 475; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COBALT SILICIDES
COMPARATIVE EVALUATIONS
CURRENT DENSITY
ELECTRICAL PROPERTIES
ION IMPLANTATION
IRON SILICIDES
LAYERS
MOLYBDENUM SILICIDES
NICKEL IONS
NICKEL SILICIDES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SURFACES
TANTALUM SILICIDES
TITANIUM SILICIDES
TUNGSTEN SILICIDES
X-RAY DIFFRACTION
ZIRCONIUM SILICIDES