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Capacitance/voltage studies on etched and anodized single-crystal n-CdSe

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.330659· OSTI ID:5808767
The influence of redox couples on the measured flatband potentials of n-CdSe was investigated. It is concluded that flatband shifts are due to interface surface state-redox electrolyte carrier exchange that leads to variable interface state charge. Interface state densities approx.2 x 10/sup 12/ cm/sup -2/, were determined with thin anodically grown selenium layer. A band diagram for the CdSe/Se electrode is presented.
Research Organization:
Materials Research Laboratory, SRI International, Menlo Park, California 94025
OSTI ID:
5808767
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:3; ISSN JAPIA
Country of Publication:
United States
Language:
English