Electrochemical studies of photocorrosion of n-CdSe

Journal Article · Sat Jan 01 04:00:00 EST 1983 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2119676· OSTI ID:5494543

Frese, Jr, K W

Rotating-ring-disk studies of the photoelectrochemical corrosion of n-CdSe (1120) have been made. Flatband potentials for CdSe as a function of light intensity and redox potential were determined. The studies focused on the role of the Se corrosion layer. Evidence is presented to show that the nominally Se layer is a good hole conducto with an active energy level for holes at +0.76V vs. SCE. The Marcus-Gerischer reactivity pattern was found by an analysis of stabilization efficiency with various reducing agents.

• Research Organization: SRI International, Menlo Park, CA
• OSTI ID: 5494543
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 130:1; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140505* -- Solar Energy Conversion-- Photochemical
Photobiological
& Thermochemical Conversion-- (1980-)
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CHEMISTRY
CORROSION
ELECTROCHEMISTRY
MATERIALS
N-TYPE CONDUCTORS
PHOTOCHEMICAL REACTIONS
REDOX POTENTIAL
REDUCING AGENTS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
STABILIZATION