Active high power RF pulse compression using optically switched resonant delay lines
- Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (United States)
- Lawrence Berkeley Lab. Berkeley, California (United States)
We present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory (1). It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE{sub 01} mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability. {copyright} {ital 1997 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 580201
- Report Number(s):
- CONF-9610281--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 398; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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