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Active high-power RF pulse compression using optically switched resonant delay lines

Journal Article · · IEEE Transactions on Microwave Theory and Techniques
DOI:https://doi.org/10.1109/22.618460· OSTI ID:531489
 [1]; ;  [1];  [2]
  1. Stanford Linear Accelerator Center, CA (United States)
  2. Lawrence Berkeley Lab., CA (United States)

During the past few years, high-power RF pulse-compression systems have developed considerably. These systems provide a method for enhancing the peak power capability of high-power RF sources. One important application is driving accelerator structures. In particular, future linear colliders, such as the proposed next linear collider (NLC), require peak RF powers which cannot be generated by the current state-of-the-art microwave tubes. The authors present the design and a proof of principle experimental results of an optically controlled high-power RF pulse-compression system. In principle, the design should handle a few hundreds of megawatts of power at X-band. The system is based on the switched resonant delay-line theory. It employs resonant delay lines as a means of storing RF energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high-power microwave switch increases the coupling to the lines just before the start of the output pulse. The high-power microwave switch required for this system is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE{sub 01} mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability.

Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC03-76SF00515
OSTI ID:
531489
Journal Information:
IEEE Transactions on Microwave Theory and Techniques, Journal Name: IEEE Transactions on Microwave Theory and Techniques Journal Issue: 8Pt2 Vol. 45; ISSN IETMAB; ISSN 0018-9480
Country of Publication:
United States
Language:
English

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