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Particle emission induced by the interaction of highly charged slow Xe-ions with a SiO2 surface

Conference ·
OSTI ID:5798669
 [1];  [2];  [2];  [1];  [2];  [2]
  1. Hahn-Meitner Inst. (HMI), Berlin (Germany)
  2. Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sputtering of surface atoms by low energy (a few keV) heavy ions is a commonly used technique in material science and applied physics. In general, sputtering occurs via nuclear energy transfer processes and is determined mainly by the atom-atom interaction potentials. In the energy range of interest these potentials depend only slightly on the charge state of one collision partner if the other is neutral. The development of new ion-sources, however, allows for the use of ions with charged states of q > 50. For these highly charged ions it is conceivable that electronic processes come into play as well. If, for example, the density of charged surface atoms exceeds a certain limit, then particle emission can occur via the electrostatic repulsion of target atoms, the so-called Coulomb explosion. Indications for such electronic effects have been found in a few investigations of ion-induced sputtering Si (q < 12 in Arq+). However, the order of magnitude of this effect is not clear until now. In this work we present preliminary data on sputtering, ion backscattering, electron and photon emission from SiO2 surface induced by incident Xe ions of very high charge states (q=30--50). The experiment was performed at the electron beam ion trap (EBIT) of the Lawrence Livermore National Laboratory using a time-of-flight (TOF) ion analyzer-system from the Hahn-Meitner-Institute, Berlin.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5798669
Report Number(s):
UCRL-JC--109057; CONF-910931--3; ON: DE92007307
Resource Type:
Conference paper/presentation
Conference Information:
12. European conference on surface science, Stockholm (Sweden), 9-12 Sep 1991
Country of Publication:
United States
Language:
English