Control of dihydride bond density in reactive sputtered amorphous silicon

Journal Article · Thu Nov 01 00:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325862· OSTI ID:5777089

Jeffrey, F R; Shanks, H R; Danielson, G C

Data are presented which demonstrate how the dihydride bonding density in hydrogenated amorphous silicon produced by reactive rf sputtering may be controlled through variation of the rf sputtering power. It is suggested that as the power is increased, the temperature of the ions and neutral atoms above the substrate surface increases until particles incident on the surface have enough energy to prevent or destroy the dihydride bonding configuration. Conductivity data are also presented which show a decrease in dark conductivity and photoconductivity as dihydride bond density is increased. It is concluded that the dihydride bonding reduces carrier mobility.

• Research Organization: Ames Laboratory: USDOE and Department of Physics, Iowa State University, Ames, Iowa 50011
• OSTI ID: 5777089
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
BINDING ENERGY
PHOTOCONDUCTIVITY
AMORPHOUS STATE
ATOMS
CATHODE SPUTTERING
CONTROL
DATA
ELECTRIC CONDUCTIVITY
FILMS
HYDRIDES
IONS
NEUTRAL PARTICLES
SPUTTERING
SUBSTRATES
SURFACES
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
HYDROGEN COMPOUNDS
INFORMATION
PARTICLES
PHYSICAL PROPERTIES
SEMIMETALS
360605* - Materials- Radiation Effects