RF Sputtering for preparing substantially pure amorphous silicon monohydride

Patent · Tue Oct 12 00:00:00 EDT 1982

OSTI ID:864364

Jeffrey, Frank R ^[1]; Shanks, Howard R ^[1]

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1. Ames, IA

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

• Research Organization: Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
• DOE Contract Number: W-7405-ENG-82
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4353788
• Application Number: 06/181,410
• OSTI ID: 864364
• Country of Publication: United States
• Language: English

Related Subjects

rf
sputtering
preparing
substantially
pure
amorphous
silicon
monohydride
process
controlling
dihydride
bond
densities
hydrogenated
produced
reactive
target
provided
chamber
substrate
therein
positioned
power
applied
contact
plasma
hydrogen
argon
fed
pressure
reduced
value
sufficient
maintain
provide
density
range
watts
square
inch
22
sputter
hydride
decreasing
increase
films
plasma produced
rf sputter
substantially pure
amorphous silicon
hydrogenated amorphous
rf power
power density
square inch
silicon produced
target position
rf sputtering
pure amorphous
reactive rf
/204/136/423/