RF Sputtering for preparing substantially pure amorphous silicon monohydride
Abstract
A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.
- Inventors:
-
- (Ames, IA)
- Publication Date:
- Research Org.:
- Ames Laboratory (AMES), Ames, IA; Iowa State University, Ames, IA (US)
- OSTI Identifier:
- 864364
- Patent Number(s):
- US 4353788
- Application Number:
- 06/181,410
- Assignee:
- United States of America as represented by United States (Washington, DC) AMES
- DOE Contract Number:
- W-7405-ENG-82
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- rf; sputtering; preparing; substantially; pure; amorphous; silicon; monohydride; process; controlling; dihydride; bond; densities; hydrogenated; produced; reactive; target; provided; chamber; substrate; therein; positioned; power; applied; contact; plasma; hydrogen; argon; fed; pressure; reduced; value; sufficient; maintain; provide; density; range; watts; square; inch; 22; sputter; hydride; decreasing; increase; films; plasma produced; rf sputter; substantially pure; amorphous silicon; hydrogenated amorphous; rf power; power density; square inch; silicon produced; target position; rf sputtering; pure amorphous; reactive rf; /204/136/423/
Citation Formats
Jeffrey, Frank R., and Shanks, Howard R. RF Sputtering for preparing substantially pure amorphous silicon monohydride. United States: N. p., 1982.
Web.
Jeffrey, Frank R., & Shanks, Howard R. RF Sputtering for preparing substantially pure amorphous silicon monohydride. United States.
Jeffrey, Frank R., and Shanks, Howard R. Tue .
"RF Sputtering for preparing substantially pure amorphous silicon monohydride". United States. https://www.osti.gov/servlets/purl/864364.
@article{osti_864364,
title = {RF Sputtering for preparing substantially pure amorphous silicon monohydride},
author = {Jeffrey, Frank R. and Shanks, Howard R.},
abstractNote = {A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {10}
}