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Title: Adhesion between CVD diamond films and tungsten

Conference ·
OSTI ID:5776118
 [1]; ;  [2]
  1. New Mexico Inst. of Mining and Technology, Socorro, NM (USA)
  2. Sandia National Labs., Albuquerque, NM (USA)

Adhesion between diamond films synthesized by a CVD method and tungsten has been investigated by a scratch and pull testing methods. Diamond films have been deposited at temperatures from 1173 to 1323 K with a growth rate ranging from 0.2 to 0.45 {mu}m/hour. The films are highly crystalline and are dominated by (100) faces at low temperatures, changing to (111) at higher temperatures. Grain size and residual stress in the films increases with increasing deposition temperature. X-ray diffraction shows the expected diamond diffraction peaks plus peaks attributed to WC and W{sub 2}C. Raman spectroscopy shows a sharp diamond band for all of the films, with a small broad peak, attributed to amorphous carbon. There is no distinct correlation between diamond/amorphous carbon intensity with deposition temperature. Scratch adhesion testing shows the expected failure mode for brittle coatings, but can not be quantified because of severe degradation of the diamond stylus tip. Sebastion pull testing shows that the failure mode of the films correlates with deposition temperature, but specific adhesion strength values do not. Efforts are continuing to correlate adhesion strength with deposition and structural parameters of the diamond films. 7 refs., 6 figs., 2 tabs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5776118
Report Number(s):
SAND-90-2961C; CONF-910552-11; ON: DE91013757
Resource Relation:
Conference: 179. meeting of the Electrochemical Society, Washington, DC (USA), 5-10 May 1991
Country of Publication:
United States
Language:
English