Synthesis of metastable A-15 ''Nb/sub 3/Si'' by ion implantation and on its superconducting transition temperature

Journal Article · Tue Jan 01 04:00:00 EST 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327358· OSTI ID:5774051

Clapp, M T; Rose, R M

The authors have found a new technique for the synthesis of metastable compounds of well-defined composition: namely, ion implantation of a selected element into the desired crystal structure. (M.T. Clapp and R.M. Rose, Appl. Phys. Lett. 33, 205 (1978)). Starting with a substrate material of A-15 Nb/sub 3/Al/sub 0.9/Si/sub 0.1/, two basic approaches were tried towards the formation of A-15 Nb/sub 3/Si by Si implantation: (1) direct replacement of the Al by Si and (2) implantation into a surface layer depleted of Al. This latter approach proved to be the most successful. It consisted of removing the Al by a diffusion anneal and replacing the Al deficiency by sequential Si implantations. Upon subsequent heat treatment a surface layer of A-15 Nb/sub 3/Al/sub 0.2/Si/sub 0.8/ was produced. Details of the experimental procedure and a discussion of the superconducting transition temperature measurements of the implanted surfaces are presented.

• Research Organization: Mechanical Engineering Department, University of Massachusetts, Amherst, Massachusetts 01003
• OSTI ID: 5774051
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ANNEALING
CRYSTAL STRUCTURE
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HEAT TREATMENTS
ION IMPLANTATION
LAYERS
NIOBIUM COMPOUNDS
NIOBIUM SILICIDES
PHYSICAL PROPERTIES
QUANTITY RATIO
SILICIDES
SILICON COMPOUNDS
SUBSTRATES
SUPERCONDUCTIVITY
SURFACES
SYNTHESIS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE