Electrical properties of neutron-transmutation-doped germanium

Technical Report · Sun Aug 01 04:00:00 EDT 1982

DOI:https://doi.org/10.2172/5770973· OSTI ID:5770973

Rodder, M

Electrical properties of neutron-transmutation-doped germanium (NTD Ge) and nearly uncompensated gallium-doped germanium have been measured as functions of net-impurity concentration (2 x 10/sup 15/cm/sup -3/ less than or equal to N/sub A/ - N/sub D/ less than or equal to 5 x 10/sup 16/cm/sup -3/) and temperature (0.3 K less than or equal to T less than or equal to 300 K). The method of impurity conduction as a function of carrier concentration and compensation was investigated in the low temperature hopping regime. For nearest neighbor hopping, the resistivity is expected to vary as rho = rho/sub 0/exp(..delta../T) while Mott's theory of variable range hopping predicts that rho = rho/sub 0/exp(..delta../T)/sup 1/4/ in the low temperature limit. In contrast, our results show that the resistivity can best be approximated by rho = rho/sub 0/exp(..delta../T)/sup 1/2/ in the hopping regime down to 0.3 K.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5770973
• Report Number(s): LBL-16216; ON: DE83016693
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
BAND THEORY
BARYONS
CARRIER DENSITY
CRYSTAL DOPING
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FERMIONS
GERMANIUM
HADRONS
HALL EFFECT
INFORMATION
METALS
NEUTRONS
NUCLEONS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PURIFICATION
RADIATION EFFECTS
TEMPERATURE DEPENDENCE
TRANSMUTATION