Electrical properties of neutron-transmutation-doped germanium

Technical Report · Sun Aug 01 00:00:00 EDT 1982

DOI:https://doi.org/10.2172/5770973· OSTI ID:5770973

Rodder, M

Electrical properties of neutron-transmutation-doped germanium (NTD Ge) and nearly uncompensated gallium-doped germanium have been measured as functions of net-impurity concentration (2 x 10/sup 15/cm/sup -3/ less than or equal to N/sub A/ - N/sub D/ less than or equal to 5 x 10/sup 16/cm/sup -3/) and temperature (0.3 K less than or equal to T less than or equal to 300 K). The method of impurity conduction as a function of carrier concentration and compensation was investigated in the low temperature hopping regime. For nearest neighbor hopping, the resistivity is expected to vary as rho = rho/sub 0/exp(..delta../T) while Mott's theory of variable range hopping predicts that rho = rho/sub 0/exp(..delta../T)/sup 1/4/ in the low temperature limit. In contrast, our results show that the resistivity can best be approximated by rho = rho/sub 0/exp(..delta../T)/sup 1/2/ in the hopping regime down to 0.3 K.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5770973
• Report Number(s): LBL-16216; ON: DE83016693
• Resource Relation: Other Information: Thesis
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
PHYSICAL RADIATION EFFECTS
ACTIVATION ENERGY
BAND THEORY
CARRIER DENSITY
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
HALL EFFECT
NEUTRONS
PURIFICATION
TEMPERATURE DEPENDENCE
TRANSMUTATION
BARYONS
DATA
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
HADRONS
INFORMATION
METALS
NUCLEONS
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION EFFECTS
360605* - Materials- Radiation Effects