X-ray characterization of oxidized tantalum nitride

Conference · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5768544

MaSaitis, R L; Opila, R L ^[1]; Ibidunni, A O ^[2]; Davenport, A J; Isaacs, H S ^[3]

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1. AT and T Bell Labs., Murray Hill, NJ (United States)
2. AT and T Bell Labs., North Andover, MA (United States)
3. Brookhaven National Lab., Upton, NY (United States)

Sputter deposited non-stoichiometric tantalum nitride films are oxidized in air between 200 and 500{degrees}C to form a passive film. The oxidized films have been studied with x-ray absorption near edge spectroscopy (XANES) and extended x-ray absorption near edge spectroscopy (EXAFS). Films exposed to KOH formed a non-protective surface layer identified in low angle XANES and EXAFS as KTaO{sub 3}. Auger electron and x-ray photoelectron spectroscopies were also used to characterize these films.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5768544
• Report Number(s): BNL-47096; CONF-911047--22; ON: DE92010168
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360205* -- Ceramics
Cermets
& Refractories-- Corrosion & Erosion
ALKALI METAL COMPOUNDS
CHEMICAL REACTIONS
ELECTRON SPECTROSCOPY
FILMS
HYDROGEN COMPOUNDS
HYDROXIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
POTASSIUM COMPOUNDS
POTASSIUM HYDROXIDES
REFRACTORY METAL COMPOUNDS
SPECTROSCOPY
SPUTTERING
TANTALUM COMPOUNDS
TANTALUM NITRIDES
TRANSITION ELEMENT COMPOUNDS
X-RAY SPECTROSCOPY