X-ray characterization of oxidized tantalum nitride
Conference
·
OSTI ID:10133638
- AT and T Bell Labs., Murray Hill, NJ (United States)
- AT and T Bell Labs., North Andover, MA (United States)
- Brookhaven National Lab., Upton, NY (United States)
Sputter deposited non-stoichiometric tantalum nitride films are oxidized in air between 200 and 500{degrees}C to form a passive film. The oxidized films have been studied with x-ray absorption near edge spectroscopy (XANES) and extended x-ray absorption near edge spectroscopy (EXAFS). Films exposed to KOH formed a non-protective surface layer identified in low angle XANES and EXAFS as KTaO{sub 3}. Auger electron and x-ray photoelectron spectroscopies were also used to characterize these films.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10133638
- Report Number(s):
- BNL--47096; CONF-911047--22; ON: DE92010168
- Country of Publication:
- United States
- Language:
- English
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