Ionizing radiation effects on HgCdTe MIS devices
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:5767720
- Northrop Electronics Systems Div., Hawthorne, CA (US)
- Naval Research Lab., Washington, DC (USA)
Total-dose irradiations of HgCdTe MIS capacitors containing an anodic-sulfide interface passivation layer reveal electron and hole trapping in the insulator and irradiation-bias dependences of flatband voltage shift, interface trap density, surface generation velocity, and storage time. Under positive irradiation bias, charge buildup in the insulator is dominated by trapped holes. Isochronal annealing studies reveal nearly complete recovery of the flatband voltage at {approximately} 275 K for an irradiation of 10{sup 5} rad(Si) at {approximately} 80 K. Significant neutralization of trapped holes is evident if the applied bias is changed during irradiation.
- OSTI ID:
- 5767720
- Report Number(s):
- CONF-900723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ionizing radiation effects in n-channel (Hg,Cd)Te misfets with anodic sulfide passivation
Ionizing radiation effects on GaAsP MIS capacitor structures
Physical mechanisms of radiation hardening of MOS devices by ion implantation
Conference
·
Mon Nov 30 23:00:00 EST 1987
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:7256794
Ionizing radiation effects on GaAsP MIS capacitor structures
Conference
·
Fri Nov 30 23:00:00 EST 1973
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 166-170
·
OSTI ID:4326036
Physical mechanisms of radiation hardening of MOS devices by ion implantation
Conference
·
Sun Nov 30 23:00:00 EST 1975
· IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2174-2180
·
OSTI ID:4090031
Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
INTERFACES
IONIZATION
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MERCURY COMPOUNDS
MERCURY TELLURIDES
MIS TRANSISTORS
PASSIVATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
TRANSISTORS
TRAPPING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
INTERFACES
IONIZATION
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MERCURY COMPOUNDS
MERCURY TELLURIDES
MIS TRANSISTORS
PASSIVATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
TRANSISTORS
TRAPPING