Ionizing radiation effects in n-channel (Hg,Cd)Te misfets with anodic sulfide passivation

Conference · Tue Dec 01 04:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7256794

Waterman, J R; Schiebel, R A

The effect of ionizing radiation, up to a dose of 1.6x10/sup 5/ rad(ZnS), on n-channel (Hg,Cd)Te MISFETs, fabricated using anodic sulfideZnS insulators, has been investigated. Devices were irradiated under DC bias at 78K. Radiation induced threshold voltage shifts, degraded transconductance, and decreased subthreshold current-gate voltage slopes were observed. For all but the most negative biases during irradiation, threshold voltage shifts (a maximum of -6.0 V at 1.6x10/sup 5/ rad(ZnS)) are associated with net hole trapping, with evidence for trapping near the interface for zero applied field during irradiation. Evidence of electron trapping was observed for large negative biases during irradiation. The radiation induced degradation in transconductance is attributed to surface mobility reduction (30% after 1.6x10/sup 5/ rad(ZnS)) associated with scattering from interface charge. The decreased subthreshold slope (82 mVdecade at 50K after 1.0x10/sup 5/ rad(ZnS)) is attributed to modification of the pre-irradiation gate voltage-surface potential relationship by radiation induced interface traps.

• Research Organization: Naval Research Lab., Washington, DC (US)
• OSTI ID: 7256794
• Report Number(s): CONF-8707112-
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANODES
CADMIUM COMPLEXES
CHALCOGENIDES
COMPLEXES
ELECTRODES
FIELD EFFECT TRANSISTORS
INORGANIC PHOSPHORS
IONIZING RADIATIONS
IRRADIATION
MERCURY COMPOUNDS
MERCURY TELLURIDES
MIS TRANSISTORS
MODIFICATIONS
PHOSPHORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
THERMAL CONDUCTIVITY
THERMAL DEGRADATION
THERMODYNAMIC PROPERTIES
TRANSISTORS
ZINC COMPOUNDS
ZINC SULFIDES