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Voltage-controlling mechanisms in low-resistivity silicon solar cells: a unified approach

Journal Article · · IEEE Trans. Electron Devices; (United States)
OSTI ID:5766509
An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the surprising findings is the suggestion that the magnitude of the minority-carrier mobility may be process-dependent.
Research Organization:
Nasa Lewis Research Center, Cleveland, OH
OSTI ID:
5766509
Journal Information:
IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. 33:1; ISSN IETDA
Country of Publication:
United States
Language:
English