Voltage-controlling mechanisms in low-resistivity silicon solar cells: a unified approach
Journal Article
·
· IEEE Trans. Electron Devices; (United States)
OSTI ID:5766509
An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the surprising findings is the suggestion that the magnitude of the minority-carrier mobility may be process-dependent.
- Research Organization:
- Nasa Lewis Research Center, Cleveland, OH
- OSTI ID:
- 5766509
- Journal Information:
- IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. 33:1; ISSN IETDA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER MOBILITY
CHARGE CARRIERS
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RESEARCH PROGRAMS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
VOLTAGE REGULATORS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER MOBILITY
CHARGE CARRIERS
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RESEARCH PROGRAMS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
VOLTAGE REGULATORS